Free packages are available maximum ratings rating symbol value unit collector. Preliminarydata sheet 2sc3356 npn silicon rf transistor npn epitaxial silicon rf transistor for microwave lownoise amplification 3pin minimold features low noise and high gain. Discrete semiconductors 2n4403 pnp switching transistor book, halfpage m3d186. Pnp medium power transistor features high current low saturation voltage complement to 2sd882 applications voltage regulation relay driver generic switch audio power amplifier dcdc converter description the device is a pnp transistor manufactured by using planar technology resulting in rugged high performance devices. This device is designed for use as a general purpose. Onsemi general purpose transistorspnp silicon,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
Nchannel enhancement mode mosfet general purpose llc. Maximum rat ings applied to the device are individual stress limit values not normal operating conditions and are not valid simultaneously. Nchannel enhancement mode mosfet general purpose amplifierswitch 2n4351 features low on resistance low capacitance high gain high gate breakdown voltage low threshold voltage. Operating junction temperature 150 oc ordering code marking package shipment 2n3906 2n3906 to92 bulk 2n3906ap 2n3906 to92 ammopack to92 bulk to92 ammopack 15.
Continental device india limited datasheet catalog. Pnp switching transistor 2n4403 features high current max. Units bvceo collectoremitter breakdown voltage i c 200ma, ib 0 60 v. Pinning pin description 1 collector 2 base 3 emitter fig. Sep 22, 2015 2n4403 pdf datasheet fairchild, 2n4403 datasheet, 2n4403 pdf, 2n4403 pinout, 2n4403 data, circuit, ic, manual, substitute, parts, schematic, reference.
The central semiconductor 2n4402 and 2n4403 are pnp silicon transistors designed for general purpose amplifier and switching applications. Ta25c symbol units collectorbase voltage vcbo 40 v. Units pn2222a mmbt2222a pzt2222a pd total device dissipation derate above 25c 625 5. Features complementary to s9012 excellent hfe linearity emitter base collector s90 transistornpn to92 2. Mmbt4403 device package part number marking package packing method 2n4403bu 2n4403 to92 3l bulk 2n4403tf 2n4403 to92 3l tape and reel 2n4403tfr 2n4403 to92 3l tape and reel.
Continental device india limited data sheet page 3 of 6 characteristic symbol 2n4400 2n4401 2n4402 2n4403 unit voltage feedback ratio hre all 0. Pnp medium power transistor features high current low saturation voltage complement to 2sd882 applications voltage regulation relay driver generic switch audio power amplifier dcdc converter. Weitron general purpose transistors pnp silicon,alldatasheet, datasheet, datasheet search site for electronic components and. Storage time v cc 30 vdc, ic 150 madc, ib1 15 ma, ib2 15 ma ts. St 2n4402 2n4403 pnp epitaxial silicon transistor general purpose transistor collector, the hong kong stock exchange, stock code. Bf245c limiting values in accordance with the absolute maximum rating system iec 4. Operating junction and storage temperature range tj, tstg 55 to 150 c parameter symbol limit unit maximum junctiontoambient b rthja 100 cw maximum junctiontoambient c 166 notes a. Device mounted on a printedcircuit board, minimum lead length 3 mm, mounting pad for drain lead minimum 10 mm 10 mm. Highspeed switching diodes, encapsulated in small surfacemounted device smd plastic packages. Pnp general purpose amplifier this device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 ma. Weitron general purpose transistors pnp silicon,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. Operating and storage junction temperature range tj, tstg. Ordering information device package shipping 2n4403 to.
Vdd 10 6 6 6 v vgs off 12 8 6 3 v rl 560 1200 2000 2900. Signal current gain 2n4402 hfe ic 1ma, vce 10v, f 1khz 30. Tstg storage temperature range soldering temperature, for 10 seconds 300 1. The utc 2n4403 is designed for use as a general purpose. Preliminarydata sheet 2sc3356 npn silicon rf transistor npn epitaxial silicon rf. Tstg operating and storage junction temperature range 55 150 c symbol parameter max. Operating junction temperature 150 oc ordering code marking package shipment 2n3906.
Fall time ic, collector current ma 20 30 50 70 100 10 5. Pnp medium power transistor switching, 2n4403 datasheet, 2n4403 circuit, 2n4403 data sheet. The revised points can be easily searched by copying an in the pdf file and specifying it in the find what. O ooperating and storage junction temperature range. It offers the 2n4403 datasheet data transfer speeds as 2n4403 are the majority carriers and these possess superior 2n4403 datasheet than holes. Onsemi, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Onsemi general purpose transistorspnp silicon,alldatasheet, datasheet, datasheet search site for electronic components.
Specifications may change in any manner without notice. Ja thermal resistance, junction to ambient 200 357 125 cw pn2222a mmbt2222a. General purpose transistorspnp silicon, 2n4403 datasheet, 2n4403 circuit, 2n4403 data sheet. Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a. Applications industrial and consumer switching applications. Storage time v cc 30 vdc, ic 150 madc, ib1 ib2 15 madc ts. Mmbt4403 device package part number marking package packing method 2n4403bu 2n4403 to92 3l bulk 2n4403tf 2n4403 to92 3l tape and reel. For the device mounted on minimum recommended pad layout fr4 pcb with high coverage of single sided 1oz copper, in still air.
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